SKP15N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKP15N60
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 139 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 84 pF
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SKP15N60 - IGBT
SKP15N60 Datasheet (PDF)
skp15n60.pdf
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
skp15n60 skw15n60.pdf
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
Otros transistores... IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , IKW50N60T , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2