IKP03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP03N120H2
Tipo de transistor: IGBT + Diode
Código de marcado: K03H1202
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 62.5
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 9.6
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 3.9
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 5.2
Capacitancia de salida (Cc), typ, pF: 24
Carga total de la puerta (Qg), typ, nC: 22
Paquete / Cubierta: TO220
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IKP03N120H2 Datasheet (PDF)
ikp03n120h2.pdf
IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis
ikp03n120h2 ikw03n120h2 rev2 5g.pdf
IKP03N120H2 IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis
Otros transistores... IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , SGT60N60FD1P7 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ