IKP03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP03N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9.6 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 5.2 nS
Coesⓘ - Capacitancia de salida, typ: 24 pF
Paquete / Cubierta: TO220
Búsqueda de reemplazo de IKP03N120H2 - IGBT
IKP03N120H2 Datasheet (PDF)
ikp03n120h2.pdf
IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis
ikp03n120h2 ikw03n120h2 rev2 5g.pdf
IKP03N120H2 IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis
Otros transistores... IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , SGP30N60 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2