IKP03N120H2 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP03N120H2
Type: IGBT + Anti-Parallel Diode
Marking Code: K03H1202
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 62.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 9.6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Qgⓘ - Total Gate Charge, typ: 22 nC
Package: TO220
IKP03N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP03N120H2 Datasheet (PDF)
ikp03n120h2.pdf
IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis
ikp03n120h2 ikw03n120h2 rev2 5g.pdf
IKP03N120H2 IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis
Datasheet: IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , SGP30N60 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R .
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