IKP03N120H2 Specs and Replacement
Type Designator: IKP03N120H2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 62.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.6 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Package: TO220
IKP03N120H2 Substitution - IGBT ⓘ Cross-Reference Search
IKP03N120H2 datasheet
ikp03n120h2.pdf
IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
ikp03n120h2 ikw03n120h2 rev2 5g.pdf
IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
Specs: IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , FGH75T65UPD , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R .
Keywords - IKP03N120H2 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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