IHY20N120R3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHY20N120R3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 310 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.48 V @25℃

Coesⓘ - Capacitancia de salida, typ: 50 pF

Encapsulados: TO247

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IHY20N120R3 datasheet

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IHY20N120R3

IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te

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 ihy20n135r3.pdf pdf_icon

IHY20N120R3

IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage G designed for soft commutation only E TrenchSt

Otros transistores... SKP04N60, SKP06N60, SKP10N60A, SKP15N60, IKP01N120H2, IKP03N120H2, SKP02N120, IHY15N120R3, YGP20N65T2, IHY30N160R2, IKW15N120H3, IKW25N120H3, IKW40N120H3, IKD10N60R, IKU10N60R, IKD15N60R, IKU15N60R