IHY20N120R3 Todos los transistores

 

IHY20N120R3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHY20N120R3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.48 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 50 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IHY20N120R3 Datasheet (PDF)

 ..1. Size:916K  infineon
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IHY20N120R3

IHY20N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te

 7.1. Size:1484K  infineon
 ihy20n135r3.pdf pdf_icon

IHY20N120R3

IH-seriesReverse conducting IGBT with monolithic body diodeIHY20N135R3DatasheetIndustrial & MultimarketIHY20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt

Otros transistores... SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHW40T60 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R .

History: IKU10N60R | SGW50N60HS | STGW20NB60H | DGC50F65M2 | IXGX82N120B3 | VS-EMF050J60U | IRG4PSC71UD

 

 
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