IHY20N120R3 Specs and Replacement
Type Designator: IHY20N120R3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO247
IHY20N120R3 Substitution - IGBT ⓘ Cross-Reference Search
IHY20N120R3 datasheet
ds ihy20n120r3.pdf
IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te... See More ⇒
ihy20n135r3.pdf
IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage G designed for soft commutation only E TrenchSt... See More ⇒
Specs: SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , TGAN20N135FD , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R .
History: STGWT60H60DLFB | MMG75S060B6EN | STGW25H120DF2 | STGWT28IH125DF
Keywords - IHY20N120R3 transistor spec
IHY20N120R3 cross reference
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History: STGWT60H60DLFB | MMG75S060B6EN | STGW25H120DF2 | STGWT28IH125DF
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