IHY20N120R3 PDF and Equivalents Search

 

IHY20N120R3 Specs and Replacement

Type Designator: IHY20N120R3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 310 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO247

 IHY20N120R3 Substitution

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IHY20N120R3 datasheet

 ..1. Size:916K  infineon
ds ihy20n120r3.pdf pdf_icon

IHY20N120R3

IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te... See More ⇒

 7.1. Size:1484K  infineon
ihy20n135r3.pdf pdf_icon

IHY20N120R3

IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage G designed for soft commutation only E TrenchSt... See More ⇒

Specs: SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , TGAN20N135FD , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R .

History: STGWT60H60DLFB | MMG75S060B6EN | STGW25H120DF2 | STGWT28IH125DF

Keywords - IHY20N120R3 transistor spec

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