IKW15N120H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW15N120H3
Tipo de transistor: IGBT + Diode
Código de marcado: K15H1203
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 217 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 75 pF
Qgⓘ - Carga total de la puerta, typ: 75 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW15N120H3 IGBT
IKW15N120H3 Datasheet (PDF)
ikw15n120h3 rev1 2g.pdf

IKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
ikw15n120h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW15N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
ikw15n120bh6.pdf

IKW15N120BH6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
ikw15n120t2 rev2 1.pdf

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very tight parameter d
Otros transistores... SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , FGH75T65UPD , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R .



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