IKW15N120H3 IGBT. Datasheet pdf. Equivalent
Type Designator: IKW15N120H3
Type: IGBT + Anti-Parallel Diode
Marking Code: K15H1203
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 217 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 75 pF
Qgⓘ - Total Gate Charge, typ: 75 nC
Package: TO247
IKW15N120H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW15N120H3 Datasheet (PDF)
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Datasheet: SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , MBQ50T65FESC , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R .
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