All IGBT. IKW15N120H3 Datasheet

 

IKW15N120H3 Datasheet and Replacement


   Type Designator: IKW15N120H3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 217 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: TO247
      - IGBT Cross-Reference

 

IKW15N120H3 Datasheet (PDF)

 ..1. Size:828K  infineon
ikw15n120h3 rev1 2g.pdf pdf_icon

IKW15N120H3

IKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app

 ..2. Size:2282K  infineon
ikw15n120h3.pdf pdf_icon

IKW15N120H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW15N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:

 5.1. Size:2139K  infineon
ikw15n120bh6.pdf pdf_icon

IKW15N120H3

IKW15N120BH6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi

 5.2. Size:380K  infineon
ikw15n120t2 rev2 1.pdf pdf_icon

IKW15N120H3

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very tight parameter d

Datasheet: SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , GT30F132 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R .

History: STGB10NC60KD | APT100GT60JRDQ4 | TGL40N120FD | JNG15N120AI | MSAHZ52F120A | IRG4ZH70UD | APT75GN120J

Keywords - IKW15N120H3 transistor datasheet

 IKW15N120H3 cross reference
 IKW15N120H3 equivalent finder
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