IKW40N120H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N120H3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 483 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 57 nS
Coesⓘ - Capacitancia de salida, typ: 185 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IKW40N120H3 Datasheet (PDF)
ikw40n120h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW40N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
ikw40n120h3 rev1 2g.pdf

IKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
ikw40n120t2 .pdf

IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10s Designed for : GE - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t
ikw40n120cs6.pdf

IKW40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
Otros transistores... IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IRG4PC50U , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R .
History: STGW40V60F | IRGP4069 | IXGH32N60BU1 | OST30N65HMF | OST20N135HRF | IRGS4056D
History: STGW40V60F | IRGP4069 | IXGH32N60BU1 | OST30N65HMF | OST20N135HRF | IRGS4056D



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