IKW40N120H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N120H3
Tipo de transistor: IGBT + Diode
Código de marcado: K40H1203
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 483
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.05
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 57
Capacitancia de salida (Cc), typ, pF: 185
Carga total de la puerta (Qg), typ, nC: 185
Paquete / Cubierta: TO247
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IKW40N120H3 Datasheet (PDF)
ikw40n120h3.pdf
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IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW40N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
ikw40n120h3 rev1 2g.pdf
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IKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
ikw40n120t2 .pdf
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IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10s Designed for : GE - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t
ikw40n120cs6.pdf
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IKW40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
ikw40n120t2.pdf
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IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time 10s Designed for : GE - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offer
Otros transistores... IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW50N60T , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R .
![IKW40N120H3](https://alltransistors.com/images/us.png)
![IKW40N120H3](https://alltransistors.com/images/es.png)
![IKW40N120H3](https://alltransistors.com/images/ru.png)
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