IKW40N120H3 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW40N120H3
Тип транзистора: IGBT + Diode
Маркировка: K40H1203
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 483 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.05 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 57 nS
Coesⓘ - Выходная емкость, типовая: 185 pF
Qg ⓘ - Общий заряд затвора, typ: 185 nC
Тип корпуса: TO247
Аналог (замена) для IKW40N120H3
IKW40N120H3 Datasheet (PDF)
ikw40n120h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW40N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
ikw40n120h3 rev1 2g.pdf

IKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
ikw40n120t2 .pdf

IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10s Designed for : GE - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t
ikw40n120cs6.pdf

IKW40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
Другие IGBT... IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , FGL60N100BNTD , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R .



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