IKW40N120H3 - Даташиты. Аналоги. Основные параметры
Наименование: IKW40N120H3
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 483 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.05 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 57 nS
Coesⓘ - Выходная емкость, типовая: 185 pF
Тип корпуса: TO247
Аналог (замена) для IKW40N120H3
IKW40N120H3 Datasheet (PDF)
ikw40n120h3.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IKW40N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features
ikw40n120h3 rev1 2g.pdf
IKW40N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app
ikw40n120t2 .pdf
IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10 s Designed for G E - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very t
ikw40n120cs6.pdf
IKW40N120CS6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi
Другие IGBT... IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , MGD623S , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R .
Список транзисторов
Обновления
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