IHW40N60RF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW40N60RF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 305 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 88 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IHW40N60RF - IGBT
Principales características: IHW40N60RF
ihw40n60rf ver2 3g.pdf
IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
ihw40n60rf.pdf
IGBT Reverse conducting IGBT IHW40N60RF Resonant Switching Series Data sheet Industrial Power Control IHW40N60RF Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temp
ihw40n60r 2 4.pdf
IHW40N60R IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coeffici
ihw40n60r.pdf
IGBT Reverse conducting IGBT IHW40N60R Resonant Switching Series Data sheet Industrial Power Control IHW40N60R Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temper
Otros transistores... IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , FGL60N100BNTD , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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