IHW40N60RF - Аналоги. Основные параметры
Наименование: IHW40N60RF
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 305 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Coesⓘ - Выходная емкость, типовая: 88 pF
Тип корпуса: TO247
Аналог (замена) для IHW40N60RF
Технические параметры IHW40N60RF
ihw40n60rf ver2 3g.pdf
IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
ihw40n60rf.pdf
IGBT Reverse conducting IGBT IHW40N60RF Resonant Switching Series Data sheet Industrial Power Control IHW40N60RF Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temp
ihw40n60r 2 4.pdf
IHW40N60R IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coeffici
ihw40n60r.pdf
IGBT Reverse conducting IGBT IHW40N60R Resonant Switching Series Data sheet Industrial Power Control IHW40N60R Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temper
Другие IGBT... IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , FGL60N100BNTD , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF .
History: NGTB40N120L3WG
History: NGTB40N120L3WG
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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