IKW40N60H3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N60H3 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 306 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 112 pF
Encapsulados: TO247
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Otros transistores... IKD04N60R, IKU04N60R, IKD06N60R, IKU06N60R, IKW20N60H3, IKW30N60H3, IHW40N60RF, IHW30N110R3, RJH60F7BDPQ-A0, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, SGP10N60A
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