IKW40N60H3 IGBT. Datasheet pdf. Equivalent
Type Designator: IKW40N60H3
Type: IGBT + Anti-Parallel Diode
Marking Code: K40H603
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 306 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 112 pF
Qgⓘ - Total Gate Charge, typ: 223 nC
Package: TO247
IKW40N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW40N60H3 Datasheet (PDF)
ikw40n60h3.pdf
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Datasheet: IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , GT60N321 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A .
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