IKB20N60H3 Todos los transistores

 

IKB20N60H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKB20N60H3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 170 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO263

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IKB20N60H3 datasheet

 ..1. Size:1537K  infineon
 ikb20n60h3 rev1 1g.pdf pdf_icon

IKB20N60H3

 ..2. Size:1825K  infineon
 ikb20n60h3.pdf pdf_icon

IKB20N60H3

 6.1. Size:435K  infineon
 ikp20n60t ikb20n60t ikw20n60t.pdf pdf_icon

IKB20N60H3

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and F

 6.2. Size:685K  infineon
 ikb20n60t.pdf pdf_icon

IKB20N60H3

IKB20N60T TRENCHSTOP Series p Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum G

MOSTRAR MÁS

Otros transistores... IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , TGD30N40P , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 .

 

 

 


 
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