All IGBT. IKB20N60H3 Datasheet

 

IKB20N60H3 Datasheet and Replacement


   Type Designator: IKB20N60H3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO263
      - IGBT Cross-Reference

 

IKB20N60H3 Datasheet (PDF)

 ..1. Size:1537K  infineon
ikb20n60h3 rev1 1g.pdf pdf_icon

IKB20N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 ..2. Size:1825K  infineon
ikb20n60h3.pdf pdf_icon

IKB20N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKB20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.1. Size:435K  infineon
ikp20n60t ikb20n60t ikw20n60t.pdf pdf_icon

IKB20N60H3

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F

 6.2. Size:685K  infineon
ikb20n60t.pdf pdf_icon

IKB20N60H3

IKB20N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G

Datasheet: IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , MBQ40T65FDSC , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 .

History: IXGK120N60B3

Keywords - IKB20N60H3 transistor datasheet

 IKB20N60H3 cross reference
 IKB20N60H3 equivalent finder
 IKB20N60H3 lookup
 IKB20N60H3 substitution
 IKB20N60H3 replacement

 

 
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