IKD03N60RF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKD03N60RF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 53.6 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.5 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 8 nS

Coesⓘ - Capacitancia de salida, typ: 13 pF

Encapsulados: TO252

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IKD03N60RF datasheet

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 ikd03n60rf 1 1.pdf pdf_icon

IKD03N60RF

IGBT IGBT with integrated diode in packages offering space saving advantage IKD03N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Datasheet Industrial & Multimarket IKD03N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applicat

 ..2. Size:1708K  infineon
 ikd03n60rf.pdf pdf_icon

IKD03N60RF

IGBT IGBT with integrated diode in packages offering space saving advantage IKD03N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD03N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

Otros transistores... IKW30N60H3, IHW40N60RF, IHW30N110R3, IKW40N60H3, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, BT60T60ANFK, IKD04N60RF, IHW20N135R3, SGP10N60A, SGB02N60, SGB02N120, SGD02N120, SGD02N60, SGB04N60