All IGBT. IKD03N60RF Datasheet

 

IKD03N60RF IGBT. Datasheet pdf. Equivalent


   Type Designator: IKD03N60RF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K03R60F
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 53.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 13 pF
   Qgⓘ - Total Gate Charge, typ: 17.1 nC
   Package: TO252

 IKD03N60RF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKD03N60RF Datasheet (PDF)

 ..1. Size:1649K  infineon
 ikd03n60rf 1 1.pdf

IKD03N60RF IKD03N60RF

IGBTIGBT with integrated diode in packages offering space saving advantageIKD03N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzDatasheetIndustrial & MultimarketIKD03N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplicat

 ..2. Size:1708K  infineon
 ikd03n60rf.pdf

IKD03N60RF IKD03N60RF

IGBTIGBT with integrated diode in packages offering space saving advantageIKD03N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD03N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica

Datasheet: IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IRG7S313U , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 .

 

 
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