IKD03N60RF Datasheet and Replacement
Type Designator: IKD03N60RF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 53.6 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 6.5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 13 pF
Package: TO252
- IGBT Cross-Reference
IKD03N60RF Datasheet (PDF)
ikd03n60rf 1 1.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD03N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzDatasheetIndustrial & MultimarketIKD03N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplicat
ikd03n60rf.pdf

IGBTIGBT with integrated diode in packages offering space saving advantageIKD03N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD03N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica
Datasheet: IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , BT15T120ANF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 .
History: GT30G125
Keywords - IKD03N60RF transistor datasheet
IKD03N60RF cross reference
IKD03N60RF equivalent finder
IKD03N60RF lookup
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IKD03N60RF replacement
History: GT30G125



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