IHW20N135R3
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW20N135R3
Tipo de transistor: IGBT + Diode
Código de marcado: H20R1353
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 310
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.6
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.4
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
Coesⓘ - Capacitancia de salida, typ: 55
pF
Qgⓘ - Carga total de la puerta, typ: 195
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IHW20N135R3
- IGBT
IHW20N135R3
Datasheet (PDF)
..1. Size:1531K infineon
ihw20n135r3.pdf 
IH-seriesReverse conducting IGBT with monolithic body diodeIHW20N135R3DatasheetIndustrial & MultimarketIHW20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt
4.1. Size:1721K infineon
ihw20n135r5.pdf
IHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:G- very tight parameter distributionE- high ruggedness, temperature stable behav
7.1. Size:794K infineon
ihw20n120r3 rev2 5g.pdf
IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi
7.2. Size:551K infineon
ihw20n120r2 h20r1202.pdf
H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig
7.3. Size:1861K infineon
ihw20n120r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight
7.4. Size:1903K infineon
ihw20n120r5.pdf
Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri
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