IHW20N135R3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW20N135R3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 310 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 55 pF

Encapsulados: TO247

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IHW20N135R3 datasheet

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 ihw20n135r3.pdf pdf_icon

IHW20N135R3

IH-series Reverse conducting IGBT with monolithic body diode IHW20N135R3 Datasheet Industrial & Multimarket IHW20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage G designed for soft commutation only E TrenchSt

 4.1. Size:1721K  infineon
 ihw20n135r5.pdf pdf_icon

IHW20N135R3

IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering G - very tight parameter distribution E - high ruggedness, temperature stable behav

 7.1. Size:794K  infineon
 ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N135R3

IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi

 7.2. Size:551K  infineon
 ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N135R3

H20R1202 H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - hig

MOSTRAR MÁS

Otros transistores... IHW30N110R3, IKW40N60H3, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, AUIRGPS4067D1, SGP10N60A, SGB02N60, SGB02N120, SGD02N120, SGD02N60, SGB04N60, SGW02N120, SGD04N60