All IGBT. IHW20N135R3 Datasheet

 

IHW20N135R3 Datasheet and Replacement


   Type Designator: IHW20N135R3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 55 pF
   Package: TO247
      - IGBT Cross-Reference

 

IHW20N135R3 Datasheet (PDF)

 ..1. Size:1531K  infineon
ihw20n135r3.pdf pdf_icon

IHW20N135R3

IH-seriesReverse conducting IGBT with monolithic body diodeIHW20N135R3DatasheetIndustrial & MultimarketIHW20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt

 4.1. Size:1721K  infineon
ihw20n135r5.pdf pdf_icon

IHW20N135R3

IHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:G- very tight parameter distributionE- high ruggedness, temperature stable behav

 7.1. Size:794K  infineon
ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N135R3

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 7.2. Size:551K  infineon
ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N135R3

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

Datasheet: IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , HGTG30N60A4 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 .

History: SGT60T65FD1PT | GT30F123 | FGA15N120FTD | RJH60F6BDPQ-A0 | 2MBI50N-060 | IRG7I319U | SG50N06D2S

Keywords - IHW20N135R3 transistor datasheet

 IHW20N135R3 cross reference
 IHW20N135R3 equivalent finder
 IHW20N135R3 lookup
 IHW20N135R3 substitution
 IHW20N135R3 replacement

 

 
Back to Top

 


 
.