SGB02N60 Todos los transistores

Introduzca al menos 3 números o letras

SGB02N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGB02N60

Código: G02N60

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 6A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D2PAK(TO263)

Búsqueda de reemplazo de SGB02N60 - IGBT

 

SGB02N60 Datasheet (PDF)

1.1. sgb02n60 rev2 3.pdf Size:792K _infineon

SGB02N60
SGB02N60

SGB02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D?-PAK) - paral

1.2. sgb02n60.pdf Size:790K _igbt

SGB02N60
SGB02N60

 SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

4.1. sgb02n120 rev2 3.pdf Size:433K _infineon

SGB02N60
SGB02N60

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified according to JEDEC1 for

4.2. sgb02n120.pdf Size:429K _igbt

SGB02N60
SGB02N60

 SGB02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability • Qualified accordi

Otros transistores... IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , IRG4PC50F , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 .

 


SGB02N60
  SGB02N60
  SGB02N60
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras