SGB02N60 Datasheet. Specs and Replacement

Type Designator: SGB02N60  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 18 pF

Package: TO263

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SGB02N60 datasheet

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SGB02N60

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SGB02N60

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SGB02N60

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒

 8.2. Size:433K  infineon
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SGB02N60

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒

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Specs: IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, SGP10N60A, IHW20N135R3, SGB02N120, SGD02N120, SGD02N60, SGB04N60, SGW02N120, SGD04N60, SGB07N120, SGB06N60

Keywords - SGB02N60 transistor spec

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