SGB02N60 PDF and Equivalents Search

 

SGB02N60 Specs and Replacement

Type Designator: SGB02N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 18 pF

Package: TO263

 SGB02N60 Substitution

- IGBT ⓘ Cross-Reference Search

 

SGB02N60 datasheet

 ..1. Size:792K  infineon
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SGB02N60

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SGB02N60

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 8.1. Size:435K  infineon
 sgb02n120.pdf pdf_icon

SGB02N60

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒

 8.2. Size:433K  infineon
 sgb02n120 .pdf pdf_icon

SGB02N60

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒

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Specs: IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , GT30J122 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 .

Keywords - SGB02N60 transistor spec

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