SGB02N60 Specs and Replacement
Type Designator: SGB02N60
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 18 pF
Package: TO263
SGB02N60 Substitution
SGB02N60 specs
sgb02n120.pdf
SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒
sgb02n120 .pdf
SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi... See More ⇒
Specs: IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , GT30J122 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 .
History: SGT10U60SDM2D
Keywords - SGB02N60 transistor spec
SGB02N60 cross reference
SGB02N60 equivalent finder
SGB02N60 lookup
SGB02N60 substitution
SGB02N60 replacement
History: SGT10U60SDM2D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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