SGD02N120 Todos los transistores

 

SGD02N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGD02N120

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 62 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 20 pF

Encapsulados: TO252

 Búsqueda de reemplazo de SGD02N120 IGBT

- Selección ⓘ de transistores por parámetros

 

SGD02N120 datasheet

 ..1. Size:374K  infineon
 sgd02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..2. Size:376K  infineon
 sgp02n120 sgd02n120 sgi02n120g.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..3. Size:372K  infineon
 sgp02n120 sgd02n120 sgi02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 8.1. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGD02N120

SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

MOSTRAR MÁS

Otros transistores... IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , FGW75N60HD , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 .

 

 

 


 
↑ Back to Top
.