SGD02N120 PDF and Equivalents Search

 

SGD02N120 Specs and Replacement

Type Designator: SGD02N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 62 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 20 pF

Package: TO252

 SGD02N120 Substitution

- IGBT ⓘ Cross-Reference Search

 

SGD02N120 datasheet

 ..1. Size:374K  infineon
sgd02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒

 ..2. Size:376K  infineon
sgp02n120 sgd02n120 sgi02n120g.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒

 ..3. Size:372K  infineon
sgp02n120 sgd02n120 sgi02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒

 8.1. Size:353K  infineon
sgp02n60 sgd02n60g.pdf pdf_icon

SGD02N120

SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-... See More ⇒

Specs: IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , FGW75N60HD , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 .

Keywords - SGD02N120 transistor spec

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