SGD02N120
IGBT. Datasheet pdf. Equivalent
Type Designator: SGD02N120
Type: IGBT
Marking Code: 02N120
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 62
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 6.2
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 3.1
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 16
nS
Coesⓘ - Output Capacitance, typ: 20
pF
Qgⓘ -
Total Gate Charge, typ: 11
nC
Package:
TO252
SGD02N120
Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGD02N120
Datasheet (PDF)
..1. Size:374K infineon
sgd02n120.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
..2. Size:376K infineon
sgp02n120 sgd02n120 sgi02n120g.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
..3. Size:372K infineon
sgp02n120 sgd02n120 sgi02n120.pdf
SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-
8.1. Size:353K infineon
sgp02n60 sgd02n60g.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
8.2. Size:353K infineon
sgp02n60 sgd02n60.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
8.3. Size:350K infineon
sgd02n60.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
Datasheet: IKP20N60H3
, IHY20N135R3
, IKD03N60RF
, IKD04N60RF
, IHW20N135R3
, SGP10N60A
, SGB02N60
, SGB02N120
, FGPF4533
, SGD02N60
, SGB04N60
, SGW02N120
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, SGB07N120
, SGB06N60
, SGD06N60
, SGB15N120
.