All IGBT. SGD02N120 Datasheet

 

SGD02N120 Datasheet and Replacement


   Type Designator: SGD02N120
   Type: IGBT
   Marking Code: 02N120
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 62 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 20 pF
   Qg ⓘ - Total Gate Charge, typ: 11 nC
   Package: TO252
 

 SGD02N120 substitution

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SGD02N120 Datasheet (PDF)

 ..1. Size:374K  infineon
 sgd02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..2. Size:376K  infineon
 sgp02n120 sgd02n120 sgi02n120g.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..3. Size:372K  infineon
 sgp02n120 sgd02n120 sgi02n120.pdf pdf_icon

SGD02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 8.1. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGD02N120

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

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Datasheet: IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , YGW60N65F1A2 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 .

History: GT10J321

Keywords - SGD02N120 transistor datasheet

 SGD02N120 cross reference
 SGD02N120 equivalent finder
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