All IGBT. SGB15N120 Datasheet

 

SGB15N120 Datasheet and Replacement


   Type Designator: SGB15N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 198 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO263
 

 SGB15N120 substitution

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SGB15N120 Datasheet (PDF)

 ..1. Size:831K  infineon
 sgb15n120.pdf pdf_icon

SGB15N120

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f

 ..2. Size:836K  infineon
 sgb15n120 .pdf pdf_icon

SGB15N120

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f

 8.1. Size:788K  infineon
 sgb15n60.pdf pdf_icon

SGB15N120

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 8.2. Size:813K  infineon
 sgb15n60hs.pdf pdf_icon

SGB15N120

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

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Datasheet: SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , BT15T120ANF , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 .

Keywords - SGB15N120 transistor datasheet

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