SGB15N120 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGB15N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 198 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO263

SGB15N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGB15N120 Datasheet (PDF)

..1. Size:831K infineon
sgb15n120.pdf

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f

..2. Size:836K infineon
sgb15n120 .pdf

8.1. Size:788K infineon
sgb15n60.pdf

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

8.2. Size:813K infineon
sgb15n60hs.pdf

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

8.3. Size:815K infineon
sgb15n60hs .pdf