SGB15N120 PDF and Equivalents Search

 

SGB15N120 Specs and Replacement

Type Designator: SGB15N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 198 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO263

 SGB15N120 Substitution

- IGBT ⓘ Cross-Reference Search

 

SGB15N120 datasheet

 ..1. Size:831K  infineon
sgb15n120.pdf pdf_icon

SGB15N120

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Pb-f... See More ⇒

 ..2. Size:836K  infineon
sgb15n120 .pdf pdf_icon

SGB15N120

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Pb-f... See More ⇒

 8.1. Size:788K  infineon
sgb15n60.pdf pdf_icon

SGB15N120

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -... See More ⇒

 8.2. Size:813K  infineon
sgb15n60hs.pdf pdf_icon

SGB15N120

SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri... See More ⇒

Specs: SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , FGPF4533 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 .

History: SKM145GB063DN

Keywords - SGB15N120 transistor spec

 SGB15N120 cross reference
 SGB15N120 equivalent finder
 SGB15N120 lookup
 SGB15N120 substitution
 SGB15N120 replacement

 

 

 


History: SKM145GB063DN

🌐 : EN  ES  РУ

social

LIST

Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

 

 

 

Popular searches

irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569

 

 

↑ Back to Top
.