SGB15N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGB15N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 198 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de SGB15N120 - IGBT
SGB15N120 Datasheet (PDF)
sgb15n120.pdf
SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f
sgb15n120 .pdf
SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-f
sgb15n60.pdf
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
sgb15n60hs.pdf
SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
sgb15n60hs .pdf
SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
sgb15n60g.pdf
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
Otros transistores... SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , TGAN40N60FD , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 .
Liste
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