IHY20N135R3 Datasheet and Replacement
Type Designator: IHY20N135R3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO247
- IGBT Cross-Reference
IHY20N135R3 Datasheet (PDF)
ihy20n135r3.pdf
IH-seriesReverse conducting IGBT with monolithic body diodeIHY20N135R3DatasheetIndustrial & MultimarketIHY20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt
ds ihy20n120r3.pdf
IHY20N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te
Datasheet: IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , NCE80TD65BT , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 .
History: IRG4PSC71KD | IRG4PC50FD
Keywords - IHY20N135R3 transistor datasheet
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History: IRG4PSC71KD | IRG4PC50FD
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