All IGBT. IHY20N135R3 Datasheet

 

IHY20N135R3 Datasheet and Replacement


   Type Designator: IHY20N135R3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H20R1353
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qg ⓘ - Total Gate Charge, typ: 195 nC
   Package: TO247
 

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IHY20N135R3 Datasheet (PDF)

 ..1. Size:1484K  infineon
 ihy20n135r3.pdf pdf_icon

IHY20N135R3

IH-seriesReverse conducting IGBT with monolithic body diodeIHY20N135R3DatasheetIndustrial & MultimarketIHY20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt

 7.1. Size:916K  infineon
 ds ihy20n120r3.pdf pdf_icon

IHY20N135R3

IHY20N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te

Datasheet: IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IRG7S313U , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 .

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