IHY20N135R3 Todos los transistores

 

IHY20N135R3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHY20N135R3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 310 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 55 pF

Encapsulados: TO247

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IHY20N135R3 datasheet

 ..1. Size:1484K  infineon
 ihy20n135r3.pdf pdf_icon

IHY20N135R3

IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage G designed for soft commutation only E TrenchSt

 7.1. Size:916K  infineon
 ds ihy20n120r3.pdf pdf_icon

IHY20N135R3

IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te

Otros transistores... IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IXRH40N120 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 .

 

 

 


 
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