IHY20N135R3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHY20N135R3
Tipo de transistor: IGBT + Diode
Código de marcado: H20R1353
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 310 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 55 pF
Qgⓘ - Carga total de la puerta, typ: 195 nC
Paquete / Cubierta: TO247
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IHY20N135R3 Datasheet (PDF)
ihy20n135r3.pdf
IH-seriesReverse conducting IGBT with monolithic body diodeIHY20N135R3DatasheetIndustrial & MultimarketIHY20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt
ds ihy20n120r3.pdf
IHY20N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive te
Otros transistores... IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , BT15T120ANF , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 .
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