SGB04N60 Spec and Replacement
Type Designator: SGB04N60
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.4 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO263
SGB04N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGB04N60 specs
sgb04n60.pdf
SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi... See More ⇒
sgb04n60 .pdf
SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi... See More ⇒
Specs: IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , IRGB20B60PD1 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A .
Keywords - SGB04N60 transistor spec
SGB04N60 cross reference
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