SGB04N60 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGB04N60
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 50 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9.4 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 29 pF
Encapsulados: TO263
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SGB04N60 datasheet
sgb04n60.pdf
SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi
sgb04n60 .pdf
SGB04N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi
Otros transistores... IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , IRGB20B60PD1 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A .
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