SGW02N120 Datasheet and Replacement
Type Designator: SGW02N120
Type: IGBT
Marking Code: G02N120
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Qg ⓘ - Total Gate Charge, typ: 11 nC
Package: TO247
SGW02N120 substitution
SGW02N120 Datasheet (PDF)
sgw02n120 .pdf
SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according
sgw02n120.pdf
SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according
Datasheet: IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , IRGP4062D , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 .
History: HGTG11N120CND
Keywords - SGW02N120 transistor datasheet
SGW02N120 cross reference
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History: HGTG11N120CND
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