SGW02N120 Todos los transistores

 

SGW02N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGW02N120
   Tipo de transistor: IGBT
   Código de marcado: G02N120
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 50 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Coesⓘ - Capacitancia de salida, typ: 20 pF
   Qgⓘ - Carga total de la puerta, typ: 11 nC
   Paquete / Cubierta: TO247
 

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SGW02N120 Datasheet (PDF)

 ..1. Size:808K  infineon
 sgw02n120 .pdf pdf_icon

SGW02N120

SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according

 ..2. Size:806K  infineon
 sgw02n120.pdf pdf_icon

SGW02N120

SGW02N120Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according

Otros transistores... IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , IRGP4062D , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 .

 

 
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