SGB07N120 Specs and Replacement
Type Designator: SGB07N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16.5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO263
SGB07N120 Substitution - IGBT ⓘ Cross-Reference Search
SGB07N120 datasheet
sgb07n120.pdf
SGB07N120 Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Qualified... See More ⇒
sgb07n120 .pdf
SGB07N120 Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Qualified... See More ⇒
Specs: SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , GT30F132 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 .
Keywords - SGB07N120 transistor spec
SGB07N120 cross reference
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