All IGBT. SGB07N120 Datasheet

 

SGB07N120 Datasheet and Replacement


   Type Designator: SGB07N120
   Type: IGBT
   Marking Code: GB07N120
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO263
      - IGBT Cross-Reference

 

SGB07N120 Datasheet (PDF)

 ..1. Size:433K  infineon
 sgb07n120.pdf pdf_icon

SGB07N120

SGB07N120Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Qualified

 ..2. Size:438K  infineon
 sgb07n120 .pdf pdf_icon

SGB07N120

SGB07N120Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Qualified

Datasheet: SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , IHW15N120R3 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 .

History: IXSK50N60BD1 | STGW40H65FB | SGB06N60 | TSG25N120CN | IXGH32N60BD1 | SRE50N120FSUD9 | IXSP16N60

Keywords - SGB07N120 transistor datasheet

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