SGB07N120 Todos los transistores

 

SGB07N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGB07N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 16.5 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Paquete / Cubierta: TO263
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SGB07N120 Datasheet (PDF)

 ..1. Size:433K  infineon
 sgb07n120.pdf pdf_icon

SGB07N120

SGB07N120Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Qualified

 ..2. Size:438K  infineon
 sgb07n120 .pdf pdf_icon

SGB07N120

SGB07N120Fast IGBT in NPT-technology C lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Qualified

Otros transistores... SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , IHW15N120R3 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 .

History: STGW60H65DF | APT43GA90BD30 | IKB03N120H2 | HGTG34N100E2 | FGPF50N33BT | APT44GA60S | MMG75H120X6TN

 

 
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