All IGBT. IKP20N60H3 Datasheet

 

IKP20N60H3 Datasheet and Replacement


   Type Designator: IKP20N60H3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO220
      - IGBT Cross-Reference

 

IKP20N60H3 Datasheet (PDF)

 ..1. Size:2293K  infineon
ikp20n60h3.pdf pdf_icon

IKP20N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 0.1. Size:1698K  infineon
ikp20n60h3g.pdf pdf_icon

IKP20N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.1. Size:435K  infineon
ikp20n60t ikb20n60t ikw20n60t.pdf pdf_icon

IKP20N60H3

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F

 6.2. Size:2135K  infineon
aikp20n60ct.pdf pdf_icon

IKP20N60H3

AIKP20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum Junction Temperature 150CG Dynamically stress testedE Sho

Datasheet: IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , SGT60U65FD1PT , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 .

History: HGT1S20N60B3S

Keywords - IKP20N60H3 transistor datasheet

 IKP20N60H3 cross reference
 IKP20N60H3 equivalent finder
 IKP20N60H3 lookup
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