IKP20N60H3 Datasheet. Specs and Replacement
Type Designator: IKP20N60H3 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO220
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IKP20N60H3 datasheet
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IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and F... See More ⇒
aikp20n60ct.pdf
AIKP20N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled diode C Features Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 150 C G Dynamically stress tested E Sho... See More ⇒
Specs: IKU06N60R, IKW20N60H3, IKW30N60H3, IHW40N60RF, IHW30N110R3, IKW40N60H3, IKB20N60H3, IKW50N60H3, GT30F125, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, SGP10N60A, SGB02N60, SGB02N120, SGD02N120
Keywords - IKP20N60H3 transistor spec
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