IKP20N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP20N60H3
Tipo de transistor: IGBT + Diode
Código de marcado: K20H603
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 170 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de IKP20N60H3 IGBT
IKP20N60H3 Datasheet (PDF)
ikp20n60h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikp20n60h3g.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikp20n60t ikb20n60t ikw20n60t.pdf

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F
aikp20n60ct.pdf

AIKP20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum Junction Temperature 150CG Dynamically stress testedE Sho
Otros transistores... IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , SGT60U65FD1PT , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 .
History: SGW50N60HS
History: SGW50N60HS



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: DHG20T65D | G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2
Popular searches
2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992