IKP20N60H3 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKP20N60H3
Тип транзистора: IGBT + Diode
Маркировка: K20H603
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 170 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 20 nS
Coesⓘ - Выходная емкость, типовая: 70 pF
Qg ⓘ - Общий заряд затвора, typ: 120 nC
Тип корпуса: TO220
Аналог (замена) для IKP20N60H3
IKP20N60H3 Datasheet (PDF)
ikp20n60h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikp20n60h3g.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikp20n60t ikb20n60t ikw20n60t.pdf

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F
aikp20n60ct.pdf

AIKP20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum Junction Temperature 150CG Dynamically stress testedE Sho
Другие IGBT... IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IRG4PF50W , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 .



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