SGP10N60A Datasheet. Specs and Replacement

Type Designator: SGP10N60A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 92 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 62 pF

Package: TO220

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SGP10N60A datasheet

 ..1. Size:321K  infineon
sgp10n60a sgw10n60a rev2.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b... See More ⇒

 ..2. Size:319K  infineon
sgp10n60a.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b... See More ⇒

 ..3. Size:348K  infineon
sgp10n60a sgw10n60a rev2 5g.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b... See More ⇒

 6.1. Size:615K  fairchild semi
sgp10n60rufd.pdf pdf_icon

SGP10N60A

IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series is designed f... See More ⇒

Specs: IKW40N60H3, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, IRGB20B60PD1, SGB02N60, SGB02N120, SGD02N120, SGD02N60, SGB04N60, SGW02N120, SGD04N60, SGB07N120

Keywords - SGP10N60A transistor spec

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