SGP10N60A Даташит. Аналоги. Параметры и характеристики.
Наименование: SGP10N60A
Тип транзистора: IGBT + Diode
Маркировка: G10N60A
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 92 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 62 pF
Qg ⓘ - Общий заряд затвора, typ: 52 nC
Тип корпуса: TO220
SGP10N60A Datasheet (PDF)
sgp10n60a sgw10n60a rev2.pdf

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgp10n60a.pdf

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgp10n60a sgw10n60a rev2 5g.pdf

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b
sgp10n60rufd.pdf

IGBTSGP10N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Aseries is designed f
Другие IGBT... IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , GT60N321 , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 .



Список транзисторов
Обновления
IGBT: JJT15N65SY | JJT15N65SS | JJT15N65SG | JJT15N65SC | JJT15N120SE | JJT50N65UH | JJT50N65UE | JJT50N65LE | JJT50N65HE | JJT120N75SA | JJT10N65ST
Popular searches
c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970 | a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet