Справочник IGBT. SGP10N60A

 

SGP10N60A Даташит. Аналоги. Параметры и характеристики.


   Наименование: SGP10N60A
   Тип транзистора: IGBT + Diode
   Маркировка: G10N60A
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 92 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 12 nS
   Coesⓘ - Выходная емкость, типовая: 62 pF
   Qg ⓘ - Общий заряд затвора, typ: 52 nC
   Тип корпуса: TO220
 
   - подбор ⓘ IGBT транзистора по параметрам

 

SGP10N60A Datasheet (PDF)

 ..1. Size:321K  infineon
sgp10n60a sgw10n60a rev2.pdfpdf_icon

SGP10N60A

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

 ..2. Size:319K  infineon
sgp10n60a.pdfpdf_icon

SGP10N60A

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

 ..3. Size:348K  infineon
sgp10n60a sgw10n60a rev2 5g.pdfpdf_icon

SGP10N60A

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

 6.1. Size:615K  fairchild semi
sgp10n60rufd.pdfpdf_icon

SGP10N60A

IGBTSGP10N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Aseries is designed f

Другие IGBT... IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , GT60N321 , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 .

 

 
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