SGP10N60A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGP10N60A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 92 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 62 pF

Encapsulados: TO220

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SGP10N60A datasheet

 ..1. Size:321K  infineon
sgp10n60a sgw10n60a rev2.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

 ..2. Size:319K  infineon
sgp10n60a.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

 ..3. Size:348K  infineon
sgp10n60a sgw10n60a rev2 5g.pdf pdf_icon

SGP10N60A

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable b

 6.1. Size:615K  fairchild semi
sgp10n60rufd.pdf pdf_icon

SGP10N60A

IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series is designed f

Otros transistores... IKW40N60H3, IKB20N60H3, IKW50N60H3, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, IRGB20B60PD1, SGB02N60, SGB02N120, SGD02N120, SGD02N60, SGB04N60, SGW02N120, SGD04N60, SGB07N120