SGB06N60 Datasheet and Replacement
Type Designator: SGB06N60
Type: IGBT
Marking Code: G06N60
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 68 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 38 pF
Qgⓘ - Total Gate Charge, typ: 32 nC
Package: TO263
- IGBT Cross-Reference
SGB06N60 Datasheet (PDF)
sgb06n60.pdf

SGB06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-P
sgb06n60 .pdf

SGB06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-P
Datasheet: SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , IKW40N65WR5 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 .
History: GT40J325 | STGW40H65FB | TSG25N120CN | IXGH32N60BD1 | SRE50N120FSUD9 | IXSP16N60
Keywords - SGB06N60 transistor datasheet
SGB06N60 cross reference
SGB06N60 equivalent finder
SGB06N60 lookup
SGB06N60 substitution
SGB06N60 replacement
History: GT40J325 | STGW40H65FB | TSG25N120CN | IXGH32N60BD1 | SRE50N120FSUD9 | IXSP16N60



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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