SGD02N60 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGD02N60
   Type: IGBT
   Marking Code: G10N60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 18 pF
   Qgⓘ - Total Gate Charge, typ: 14 nC
   Package: TO252

SGD02N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGD02N60 Datasheet (PDF)

..1. Size:353K infineon
sgp02n60 sgd02n60.pdf

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

..2. Size:350K infineon
sgd02n60.pdf

0.1. Size:353K infineon
sgp02n60 sgd02n60g.pdf

8.1. Size:374K infineon
sgd02n120.pdf

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

8.2. Size:376K infineon
sgp02n120 sgd02n120 sgi02n120g.pdf