SGD02N60 Todos los transistores

 

SGD02N60 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGD02N60

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 30 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 13 nS

Coesⓘ - Capacitancia de salida, typ: 18 pF

Encapsulados: TO252

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SGD02N60 datasheet

 ..1. Size:353K  infineon
 sgp02n60 sgd02n60.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..2. Size:350K  infineon
 sgd02n60.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 0.1. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 8.1. Size:374K  infineon
 sgd02n120.pdf pdf_icon

SGD02N60

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

MOSTRAR MÁS

Otros transistores... IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , KGF75N65KDF , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 .

 

 

 


 
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