SGD02N60 Todos los transistores

 

SGD02N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGD02N60
   Tipo de transistor: IGBT
   Código de marcado: G10N60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 13 nS
   Coesⓘ - Capacitancia de salida, typ: 18 pF
   Qgⓘ - Carga total de la puerta, typ: 14 nC
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

SGD02N60 Datasheet (PDF)

 ..1. Size:353K  infineon
 sgp02n60 sgd02n60.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..2. Size:350K  infineon
 sgd02n60.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 0.1. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGD02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 8.1. Size:374K  infineon
 sgd02n120.pdf pdf_icon

SGD02N60

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

MOSTRAR MÁS

Otros transistores... IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , IHW20N120R2 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 .

History: APT43GA90BD30 | APT44GA60S

 

 
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