SGD06N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGD06N60
Tipo de transistor: IGBT
Código de marcado: G06N60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 68 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 38 pF
Qgⓘ - Carga total de la puerta, typ: 32 nC
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SGD06N60 IGBT
SGD06N60 Datasheet (PDF)
sgd06n60.pdf
SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252
sgp06n60 sgd06n60g.pdf
SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252
Otros transistores... SGB02N120 , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , KGF75N65KDF , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 .
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