SGW25N120 Todos los transistores

 

SGW25N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGW25N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 313 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 46 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Paquete / Cubierta: TO247
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SGW25N120 Datasheet (PDF)

 ..1. Size:332K  infineon
 sgw25n120.pdf pdf_icon

SGW25N120

SGW25N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3 Qualified accordin

 ..2. Size:332K  infineon
 sgw25n120 .pdf pdf_icon

SGW25N120

SGW25N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3 Qualified accordin

Otros transistores... SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , FGH40N60UFD , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 .

History: IXGX60N60B2D1 | STGY40NC60VD | SGB07N120 | IKD10N60R | FGW50N60HD | APT43GA90BD30 | HGTG34N100E2

 

 
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