SGW25N120 Datasheet. Specs and Replacement

Type Designator: SGW25N120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 313 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 46 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO247

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SGW25N120 datasheet

 ..1. Size:332K  infineon
 sgw25n120.pdf pdf_icon

SGW25N120

SGW25N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3 Qualified accordin... See More ⇒

 ..2. Size:332K  infineon
 sgw25n120 .pdf pdf_icon

SGW25N120

SGW25N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3 Qualified accordin... See More ⇒

Specs: SGW02N120, SGD04N60, SGB07N120, SGB06N60, SGD06N60, SGB15N120, SGW15N120, SGB10N60A, FGH40N60UFD, SGW10N60A, SGB15N60, SGW15N60, SGB20N60, SGW20N60, SGB30N60, SGW30N60, SGP02N60

Keywords - SGW25N120 transistor spec

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