SGP02N60 Todos los transistores

 

SGP02N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP02N60
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 30 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 13 nS
   Coesⓘ - Capacitancia de salida, typ: 18 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

SGP02N60 Datasheet (PDF)

 ..1. Size:350K  infineon
 sgp02n60.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..2. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..3. Size:353K  infineon
 sgp02n60 sgd02n60.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 8.1. Size:374K  infineon
 sgp02n120.pdf pdf_icon

SGP02N60

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

MOSTRAR MÁS

Otros transistores... SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGT50T65FD1PT , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 .

History: FGPF70N33BT | RJH60F3DPK | GT30F123 | MM10G3T120B | HGTG20N60C3D | RJP30H1DPP-M0 | BT30N60ANF

 

 
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