Справочник IGBT. SGP02N60

 

SGP02N60 Даташит. Аналоги. Параметры и характеристики.


   Наименование: SGP02N60
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 6 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 13 nS
   Coesⓘ - Выходная емкость, типовая: 18 pF
   Тип корпуса: TO220
 

 Аналог (замена) для SGP02N60

   - подбор ⓘ IGBT транзистора по параметрам

 

SGP02N60 Datasheet (PDF)

 ..1. Size:350K  infineon
 sgp02n60.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..2. Size:353K  infineon
 sgp02n60 sgd02n60g.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 ..3. Size:353K  infineon
 sgp02n60 sgd02n60.pdf pdf_icon

SGP02N60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 8.1. Size:374K  infineon
 sgp02n120.pdf pdf_icon

SGP02N60

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGT50T65FD1PT , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 .

History: IRGP30B120KD-E | GT15J321 | SGP06N60

 

 
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