SGP15N60 Todos los transistores

 

SGP15N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP15N60
   Tipo de transistor: IGBT
   Código de marcado: G15N60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 139 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 23 nS
   Coesⓘ - Capacitancia de salida, typ: 84 pF
   Qgⓘ - Carga total de la puerta, typ: 76 nC
   Paquete / Cubierta: TO220

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SGP15N60 Datasheet (PDF)

 ..1. Size:331K  infineon
sgp15n60.pdf

SGP15N60 SGP15N60

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..2. Size:333K  infineon
sgp15n60 sgw15n60g.pdf

SGP15N60 SGP15N60

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 0.1. Size:228K  samsung
sgp15n60ruf.pdf

SGP15N60 SGP15N60

N-CHANNEL IGBT SGP15N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

 8.1. Size:332K  infineon
sgp15n120 sgw15n120.pdf

SGP15N60 SGP15N60

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.2. Size:332K  infineon
sgp15n120 sgw15n120 rev2.pdf

SGP15N60 SGP15N60

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.3. Size:402K  infineon
sgp15n120 sgw15n120 rev2 6.pdf

SGP15N60 SGP15N60

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 8.4. Size:332K  infineon
sgp15n120.pdf

SGP15N60 SGP15N60

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

Otros transistores... SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , RJP30E2DPP-M0 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS .

 

 
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