SGP15N60
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SGP15N60
Тип транзистора: IGBT
Маркировка: G15N60
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 139
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
31
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 5
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 23
nS
Coesⓘ - Выходная емкость, типовая: 84
pF
Qgⓘ - Общий заряд затвора, typ: 76
nC
Тип корпуса:
TO220
Аналог (замена) для SGP15N60
SGP15N60
Datasheet (PDF)
..1. Size:331K infineon
sgp15n60.pdf 
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
..2. Size:333K infineon
sgp15n60 sgw15n60g.pdf 
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
0.1. Size:228K samsung
sgp15n60ruf.pdf 
N-CHANNEL IGBT SGP15N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE
8.1. Size:332K infineon
sgp15n120 sgw15n120.pdf 
SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
8.2. Size:332K infineon
sgp15n120 sgw15n120 rev2.pdf 
SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
8.3. Size:402K infineon
sgp15n120 sgw15n120 rev2 6.pdf 
SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
8.4. Size:332K infineon
sgp15n120.pdf 
SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
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