SGP02N120 Todos los transistores

 

SGP02N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP02N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 62 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Coesⓘ - Capacitancia de salida, typ: 20 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

SGP02N120 Datasheet (PDF)

 ..1. Size:374K  infineon
 sgp02n120.pdf pdf_icon

SGP02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..2. Size:376K  infineon
 sgp02n120 sgd02n120 sgi02n120g.pdf pdf_icon

SGP02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 ..3. Size:372K  infineon
 sgp02n120 sgd02n120 sgi02n120.pdf pdf_icon

SGP02N120

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

 8.1. Size:350K  infineon
 sgp02n60.pdf pdf_icon

SGP02N120

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

MOSTRAR MÁS

Otros transistores... SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , BT40T60ANF , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS .

History: AOB15B65M1 | TGH30N120FD | HGTG30N60A4D | HGTG30N60C3D | IXBH9N160 | GPU150HF120D2 | IRG4PH30K

 

 
Back to Top

 


 
.